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1. product profile 1.1 general description 200 w ldmos power transistor for ism applications at frequencies from 700 mhz to 1000 mhz. [1] test signal: 3gpp test model 1; 64 dpch; par = 7.5 db at 0.01 % probability on ccdf per carrier; carrier spacing 5 mhz. 1.2 features and benefits ? easy power control ? integrated esd protection ? excellent ruggedness ? high efficiency ? excellent thermal stability ? designed for broadband operation (700 mhz to 1000 mhz) ? internally matched for ease of use ? compliant to directive 2002/ 95/ec, regarding restricti on of hazardous substances (rohs) 1.3 applications ? rf power amplifiers for ism applications in the 700 mhz to 1000 mhz frequency range. BLF10M6200; blf10m6ls200 power ldmos transistor rev. 1 ? 1 july 2013 product data sheet table 1. typical performance typical rf performance at t case = 25 ? c in a common source class-ab production test circuit. test signal f v ds p l(av) g p ? d acpr (mhz) (v) (w) (db) (%) (dbc) 2-carrier w-cdma 869 to 894 28 40 20 28.5 ? 39 [1]
BLF10M6200_blf10m6ls200 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights re served. product data sheet rev. 1 ? 1 july 2013 2 of 12 nxp semiconductors BLF10M6200; blf10m6ls200 power ldmos transistor 2. pinning information [1] connected to flange. 3. ordering information 4. limiting values [1] continuous use at maximum temperature will affect the reliability 5. thermal characteristics table 2. pinning pin description simplified outline graphic symbol BLF10M6200 (sot502a) 1drain 2gate 3source [1] blf10m6ls200 (sot502b) 1drain 2gate 3source [1] 3 2 1 sym112 1 3 2 3 2 1 sym112 1 3 2 table 3. ordering information type number package name description version BLF10M6200 - flanged ceramic package; 2 mounting holes; 2 leads sot502a blf10m6ls200 - earless flanged ceramic package; 2 leads sot502b table 4. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v ds drain-source voltage - 65 v v gs gate-source voltage ? 0.5 +13 v t stg storage temperature ? 65 +150 ?c t j junction temperature [1] - 225 ?c table 5. thermal characteristics symbol parameter conditions type typ unit r th(j-case) thermal resistance from junction to case t case =80 ?c; p l =40w BLF10M6200 0.50 k/w blf10m6ls200 0.35 k/w
BLF10M6200_blf10m6ls200 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights re served. product data sheet rev. 1 ? 1 july 2013 3 of 12 nxp semiconductors BLF10M6200; blf10m6ls200 power ldmos transistor 6. characteristics 7. test information 7.1 ruggedness in class-ab operation the BLF10M6200 and blf10m6ls200 are enhanced rugged devices and capable of withstanding a load mismatch corresponding to vswr = 10 : 1 through all phases under the following conditions: v ds =28v; i dq =1400ma; p l = 200 w; f = 894 mhz table 6. dc characteristics t j = 25 ? c; unless otherwise specified. symbol parameter conditions min typ max unit v (br)dss drain-source breakdown voltage v gs =0v; i d =0.9ma 65 - - v v gs(th) gate-source threshold voltage v ds = 10 v; i d = 270 ma 1.4 2.0 2.4 v v gsq gate-source quiescent voltage v ds = 28 v; i d = 1620 ma 1.7 2.2 2.7 v i dss drain leakage current v gs =0v; v ds =28v --4.2 ? a i dsx drain cut-off current v gs =v gs(th) + 3.75 v; v ds =10v -48-a i gss gate leakage current v gs =11v; v ds =0v --420na g fs forward transconductance v ds =10v; i d =9.45a - 18 - s r ds(on) drain-source on-state resistance v gs =v gs(th) + 3.75 v; i d =9.45a -0.07- ? table 7. ac characteristics t j = 25 ? c; unless otherwise specified. symbol parameter conditions min typ max unit c rs feedback capacitance v gs =0v; v ds =28v; f= 1mhz - 3 - pf table 8. rf characteristics test signal: 2-carrier w-cdma; par 7.5 db at 0.01 % probability on ccdf; 3gpp test model 1; 1-64 dpch; f 1 = 871.5 mhz; f 2 = 876.5 mhz; f 3 = 886.5 mhz; f 4 = 891.5 mhz; rf performance at v ds =28v; i dq = 1400 ma; t case = 25 ? c; unless otherwise specified; in a class-ab production test circuit. symbol parameter conditions min typ max unit g p power gain p l(av) = 40 w 1920- db ? d drain efficiency p l(av) = 40 w 25 28.5 - % rl in input return loss p l(av) = 40 w - ? 6.4 ? 4.5 db acpr adjacent channel power ratio p l(av) = 40 w - ? 39.4 ? 36 dbc
BLF10M6200_blf10m6ls200 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights re served. product data sheet rev. 1 ? 1 july 2013 4 of 12 nxp semiconductors BLF10M6200; blf10m6ls200 power ldmos transistor 7.2 test circuit the drawing is not to scale. fig 1. test circuit for operation at 800 mhz 001aah523 output 50 input 50 r2 r3 r1 l1 v dd v gg c2 c15 c6 c5 c9 c10 c12 c14 c18 c7 c8 c11 c13 c17 c3 c1 c16 the striplines are on a double copper-clad tac onic rf35 printed-circuit board (pcb) with ? r = 3.5 and thickness = 0.76 mm. see table 9 for list of components. the drawing is not to scale. fig 2. component layout 001aah524 nxp out 800 -1000 mhz v1.0 c7 nxp in 800 -1000 mhz v1.0 c8 c11 c13 c17 c5 q1 c6 c18 c15 c16 r3 l1 c14 c12 c10c9 r2 c2 c1 c3 r1
BLF10M6200_blf10m6ls200 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights re served. product data sheet rev. 1 ? 1 july 2013 5 of 12 nxp semiconductors BLF10M6200; blf10m6ls200 power ldmos transistor [1] american technical ceramics type 100b or capacitor of same quality. [2] tdk or capacitor of same quality. 7.3 graphical data 7.3.1 one-tone cw table 9. list of components see figure 1 and figure 2 . component description value remarks c1, c3, c11, c12, c16 multilaye r ceramic chip capacitor 68 pf [1] solder vertically c2 multilayer ceramic chip capacitor 13 pf [1] solder vertically c5, c6 multilayer ceramic chip capacitor 10 pf [1] solder vertically c7, c8, c9, c10 electrolytic capacitor 220 nf vishay vj1206y224kxb c13, c14 multilayer cera mic chip capacitor 4.7 ? f, 5 0 v [2] c15 multilayer ceramic chip capacitor 1.5 pf [1] solder vertically c17, c18 electroly tic capacitor 220 ? f, 6 3 v l1 ferrite smd bead - ferroxcube bds 3/3/4.6-4s2 or equivalent q1 BLF10M6200 - r1, r2, r3 smd resistor 9.1 ? , 0.1 w v ds = 28 v; i dq = 1400 ma; f = 881 mhz. fig 3. power gain and drain efficiency as function of output power; typical values p l (w) 0 200 160 80 120 40 001aaj415 17 19 21 g p (db) d (%) 15 20 40 60 0 g p d
BLF10M6200_blf10m6ls200 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights re served. product data sheet rev. 1 ? 1 july 2013 6 of 12 nxp semiconductors BLF10M6200; blf10m6ls200 power ldmos transistor 7.3.2 two-tone cw 7.3.3 2-carrier w-cdma v ds = 28 v; i dq = 1400 ma; f = 881 mhz ( ? 100 khz). v ds = 28 v; i dq = 1400 ma; f = 881 mhz ( ? 100 khz). fig 4. power gain and drain efficiency as function of peak envelope power load power; typical values fig 5. intermodulation distortion as a function of peak envelope power load power; typical values p l(pep) (w) 0 360 240 120 001aaj416 17 19 21 g p (db) d (%) 15 20 40 60 0 g p d 001aah520 p l(pep) (w) 0 180 120 60 ?40 ?50 ?30 ?20 imd (dbc) ?60 imd3 imd5 imd7 v ds = 28 v; i dq = 1400 ma; f = 881 mhz ( ? 5 mhz); carrier spacing 10 mhz. v ds = 28 v; i dq = 1400 ma; f = 881 mhz ( ? 5 mhz); carrier spacing 10 mhz. fig 6. power gain and drain efficiency as function of average output power; typical values fig 7. adjacent channel power ratio and third order intermodulation distortion as function of average output power; typical values 001aaj417 p l(av) (w) 060 40 20 20 19 21 22 g p (db) d (%) 18 20 10 30 40 0 d g p 001aah522 p l(av) (w) 060 40 20 ?45 ?50 ?40 ?35 imd3, acpr (dbc) ?55 imd3 acpr
BLF10M6200_blf10m6ls200 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights re served. product data sheet rev. 1 ? 1 july 2013 7 of 12 nxp semiconductors BLF10M6200; blf10m6ls200 power ldmos transistor 8. package outline fig 8. package outline sot502a references outline version european projection issue date iec jedec jeita sot502a 03-01-10 12-05-02 0 5 10 mm scale flanged ceramic package; 2 mounting holes; 2 leads sot502a p l a f b d u 2 h q c 1 3 2 d 1 e a c q u 1 c b e 1 m m w 2 unit a mm d b 12.83 12.57 0.15 0.08 20.02 19.61 9.53 9.25 19.94 18.92 9.91 9.65 4.72 3.43 c u 2 0.25 0.51 27.94 qw 2 w 1 f 1.14 0.89 u 1 34.16 33.91 l 5.33 4.32 p 3.38 3.12 q 1.70 1.45 ee 1 9.50 9.30 inches 0.505 0.495 0.006 0.003 0.788 0.772 d 1 19.96 19.66 0.786 0.774 0.375 0.364 0.785 0.745 0.390 0.380 0.186 0.135 0.01 0.02 1.100 0.045 0.035 1.345 1.335 0.210 0.170 0.133 0.123 0.067 0.057 0.374 0.366 h dimensions (millimetre dimensions are derived from the original inch dimensions) w 1 ab m m m
BLF10M6200_blf10m6ls200 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights re served. product data sheet rev. 1 ? 1 july 2013 8 of 12 nxp semiconductors BLF10M6200; blf10m6ls200 power ldmos transistor fig 9. package outline sot502b references outline version european projection issue date iec jedec jeita sot502b 07-05-09 12-05-02 0 5 10 mm scale earless flanged ceramic package; 2 leads sot502b a f b d u 2 l h q c 1 3 2 d 1 e d u 1 d e 1 m m w 2 unit a mm d b 12.83 12.57 0.15 0.08 20.02 19.61 9.53 9.25 19.94 18.92 9.91 9.65 4.72 3.43 c u 2 0.25 w 2 f 1.14 0.89 u 1 20.70 20.45 l 5.33 4.32 q 1.70 1.45 ee 1 9.50 9.30 inches 0.505 0.495 0.006 0.003 0.788 0.772 d 1 19.96 19.66 0.786 0.774 0.375 0.364 0.785 0.745 0.390 0.380 0.186 0.135 0.010 0.045 0.035 0.815 0.805 0.210 0.170 0.067 0.057 0.374 0.366 h dimensions (millimetre dimensions are derived from the original inch dimensions)
BLF10M6200_blf10m6ls200 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights re served. product data sheet rev. 1 ? 1 july 2013 9 of 12 nxp semiconductors BLF10M6200; blf10m6ls200 power ldmos transistor 9. handling information 10. abbreviations 11. revision history caution this device is sensitive to electrostatic di scharge (esd). observe precautions for handling electrostatic sensitive devices. such precautions are described in the ansi/esd s20.20 , iec/st 61340-5 , jesd625-a or equivalent standards. table 10. abbreviations acronym description 3gpp 3rd generation partnership project ccdf complementary cumulative distribution function cw continuous wave dpch dedicated physical channel esd electrostatic discharge ism industrial, scientific and medical ldmos laterally diffused metal-oxide semiconductor par peak-to-average ratio smd surface mounted device vswr voltage standing-wave ratio w-cdma wideband code division multiple access table 11. revision history document id release date data sheet status change notice supersedes BLF10M6200_blf10m6ls200 v.1 20130701 product data sheet - -
BLF10M6200_blf10m6ls200 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights re served. product data sheet rev. 1 ? 1 july 2013 10 of 12 nxp semiconductors BLF10M6200; blf10m6ls200 power ldmos transistor 12. legal information 12.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term ?short data sheet? is explained in section ?definitions?. [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple device s. the latest product status information is available on the internet at url http://www.nxp.com . 12.2 definitions draft ? the document is a draft versi on only. the content is still under internal review and subject to formal approval, which may result in modifications or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall hav e no liability for the consequences of use of such information. short data sheet ? a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request vi a the local nxp semiconductors sales office. in case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. product specification ? the information and data provided in a product data sheet shall define the specification of the product as agreed between nxp semiconductors and its customer , unless nxp semiconductors and customer have explicitly agreed otherwis e in writing. in no event however, shall an agreement be valid in which the nxp semiconductors product is deemed to offer functions and qualities beyond those described in the product data sheet. 12.3 disclaimers limited warranty and liability ? information in this document is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such info rmation. nxp semiconductors takes no responsibility for the content in this document if provided by an information source outside of nxp semiconductors. in no event shall nxp semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. notwithstanding any damages that customer might incur for any reason whatsoever, nxp semiconductors? aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the terms and conditions of commercial sale of nxp semiconductors. right to make changes ? nxp semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use ? nxp semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors and its suppliers accept no liability for inclusion and/or use of nxp semiconducto rs products in such equipment or applications and therefore such inclusion and/or use is at the customer?s own risk. applications ? applications that are described herein for any of these products are for illustrative purpos es only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. customers are responsible for the design and operation of their applications and products using nxp semiconductors products, and nxp semiconductors accepts no liability for any assistance with applications or customer product design. it is customer?s sole responsibility to determine whether the nxp semiconductors product is suitable and fit for the customer?s applications and products planned, as well as fo r the planned application and use of customer?s third party customer(s). customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. nxp semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer?s applications or products, or the application or use by customer?s third party customer(s). customer is responsible for doing all necessary testing for the customer?s applic ations and products using nxp semiconductors products in order to av oid a default of the applications and the products or of the application or use by customer?s third party customer(s). nxp does not accept any liability in this respect. limiting values ? stress above one or more limiting values (as defined in the absolute maximum ratings system of iec 60134) will cause permanent damage to the device. limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the recommended operating conditions section (if present) or the characteristics sections of this document is not warranted. constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. terms and conditions of commercial sale ? nxp semiconductors products are sold subject to the gener al terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms , unless otherwise agreed in a valid written individual agreement. in case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. nxp semiconductors hereby expressly objects to applying the customer?s general terms and conditions with regard to the purchase of nxp semiconducto rs products by customer. no offer to sell or license ? nothing in this document may be interpreted or construed as an offer to sell products t hat is open for acceptance or the grant, conveyance or implication of any lic ense under any copyrights, patents or other industrial or intellectual property rights. document status [1] [2] product status [3] definition objective [short] data sheet development this document contains data from the objecti ve specification for product development. preliminary [short] data sheet qualification this document contains data from the preliminary specification. product [short] data sheet production this document contains the product specification.
BLF10M6200_blf10m6ls200 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights re served. product data sheet rev. 1 ? 1 july 2013 11 of 12 nxp semiconductors BLF10M6200; blf10m6ls200 power ldmos transistor export control ? this document as well as the item(s) described herein may be subject to export control regu lations. export might require a prior authorization from competent authorities. non-automotive qualified products ? unless this data sheet expressly states that this specific nxp semicon ductors product is automotive qualified, the product is not suitable for automotive use. it is neither qualified nor tested in accordance with automotive testing or application requirements. nxp semiconductors accepts no liabili ty for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. in the event that customer uses t he product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without nxp semiconductors? warranty of the product for such automotive applicat ions, use and specifications, and (b) whenever customer uses the product for automotive applications beyond nxp semiconductors? specifications such use shall be solely at customer?s own risk, and (c) customer fully indemnifies nxp semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive app lications beyond nxp semiconductors? standard warranty and nxp semiconduct ors? product specifications. translations ? a non-english (translated) version of a document is for reference only. the english version shall prevail in case of any discrepancy between the translated and english versions. 12.4 trademarks notice: all referenced brands, produc t names, service names and trademarks are the property of their respective owners. 13. contact information for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com
nxp semiconductors BLF10M6200; blf10m6ls200 power ldmos transistor ? nxp b.v. 2013. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please se nd an email to: salesaddresses@nxp.com date of release: 1 july 2013 document identifier: BLF10M6200_blf10m6ls200 please be aware that important notices concerning this document and the product(s) described herein, have been included in section ?legal information?. 14. contents 1 product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 general description . . . . . . . . . . . . . . . . . . . . . 1 1.2 features and benefits . . . . . . . . . . . . . . . . . . . . 1 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 2 pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 thermal characteristics . . . . . . . . . . . . . . . . . . 2 6 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 7 test information . . . . . . . . . . . . . . . . . . . . . . . . . 3 7.1 ruggedness in class-ab operation . . . . . . . . . 3 7.2 test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 7.3 graphical data . . . . . . . . . . . . . . . . . . . . . . . . . 5 7.3.1 one-tone cw . . . . . . . . . . . . . . . . . . . . . . . . . . 5 7.3.2 two-tone cw . . . . . . . . . . . . . . . . . . . . . . . . . . 6 7.3.3 2-carrier w-cdma . . . . . . . . . . . . . . . . . . . . . . 6 8 package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7 9 handling information. . . . . . . . . . . . . . . . . . . . . 9 10 abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 11 revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9 12 legal information. . . . . . . . . . . . . . . . . . . . . . . 10 12.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . 10 12.2 definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 12.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 12.4 trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 11 13 contact information. . . . . . . . . . . . . . . . . . . . . 11 14 contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

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